Integrated wafer-level processing system

ABSTRACT

Examples of techniques for an integrated wafer-level processing system are disclosed. In one example implementation according to aspects of the present disclosure, an integrated wafer-level processing system includes a memory wafer and a processing element connected to the memory wafer via a data connection.

BACKGROUND

The present disclosure relates to processing systems and, moreparticularly, to an integrated wafer-level processing system.

Server and cloud computing solutions need low cost memory with higherbandwidth and much lower latency for improved performance. Currentpackaging solutions can be used but have limitations on bandwidth,latency and cost.

Current implementations may use a board trace to connect a processor tomemory cards (i.e., a multiplicity of dual in-line memory modules(DIMMs)). Current implementations using a board (e.g., a motherboard) toconnect a processor to memory cards use longer communicative paths thatresult in slower data transfer between the processor and the memory.Moreover, current implementations utilize course pin connects that limitthe number of connections between the processor and the memory cards.Additionally, the inclusion of the board, associated packaging, andinterconnections to connect the processor to the memory increases cost.

In current implementations, each DIMM contains groups of dynamicrandom-access memory (DRAM) chips (e.g., 8 DRAM chips per DIMM, 16 DRAMchips per DIMM, etc.) referred to as a rank. A rank of DRAM chipsresponds together to a memory command (e.g., a read command, a writecommand, etc.), and, in a processing system, a rank may include extraDRAM chips on each DIMM (e.g., 1-2 spares) for backup purposes. Errorchecking and correcting codes enable one of these DRAM chips in a rankto become partially or completely bad, and the processing system isstill able to function with correct data.

SUMMARY

According to examples of the present disclosure, an integratedwafer-level processing system is provided. An example integrated-waferlevel processing system includes a memory wafer and a processing elementconnected to the memory wafer via a data connection.

An alternate example integrated-wafer level processing system includes aplurality of memory wafers connected together and a processing elementconnected to at least one of the plurality of memory wafers via a dataconnection.

An alternate example integrated-wafer level processing system includes amemory wafer and a plurality of processing elements. Each of theplurality of processing elements is connected to the memory wafer via adata connection.

An alternate example integrated-wafer level processing system includes aplurality of memory wafers connected together and a plurality ofprocessing elements. Each of the plurality of processing elements isconnected to at least one of the plurality of memory wafers via a dataconnection.

An example memory wafer includes a plurality of memory elements and aprocessing element connected to the plurality memory elements.

In some implementations, the present techniques reduce the distancecommands and data travel between the processing element and the memoryelements on the memory wafer. In some examples, the distance may bereduced by approximately 50%. Consequently, the present techniques alsoreduce the time the commands and data take to travel between theprocessing element and the memory elements on the memory wafer. Thepresent techniques also provide more connections between the processingelement and the memory elements than traditional implementations thatutilize longer circuit board connections positioned between theprocessing and memory elements, without occupying additional physicalspace. By removing the traditional circuit board between the processingand memory elements and utilizing options such as but not limited tohigh bandwidth wiring from traditional semiconductor processing for onwafer high bandwidth, silicon packaging high density bandwidth, and/orhigh density organic or other dielectric packaging to create more pathsfor transferring data between the processor and the memory elements arepossible. Since the traditional circuit board itself can be eliminated,the singulation of memory die (elements) and their associated packagingcan be eliminated when replaced with memory elements within wafers,there is opportunity for manufacturing cost reduction, overall wiringlength reduction, and overall system size demands are reduced.Integrated cooling to support microprocessors, memory wafers, and/ormemory stacks can also be achieved with integrated liquid cooling,integrated liquid cooling and air cooling, air cooling only orcombinations of other thermal solutions.

Additional features and advantages are realized through the techniquesof the present disclosure. Other aspects are described in detail hereinand are considered a part of the disclosure. For a better understandingof the present disclosure with the advantages and the features, refer tothe following description and to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantagesthereof, are apparent from the following detailed description taken inconjunction with the accompanying drawings in which:

FIG. 1A illustrates a top view and FIG. 1B illustrates a side view of ablock diagram of an embodiment of an integrated wafer-level processingsystem according to aspects of the present disclosure;

FIG. 2 illustrates a block diagram of an integrated wafer-levelprocessing system comprising a processing element connected to a memorywafer that contains memory elements according to aspects of the presentinvention;

FIG. 3 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system comprising a plurality ofmemory wafers according to aspects of the present invention;

FIG. 4 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system comprising a plurality ofprocessing elements according to aspects of the present invention;

FIG. 5 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system comprising a plurality ofmemory wafers and a plurality of processing elements according toaspects of the present invention;

FIG. 6 illustrates a block diagram of an alternate embodiment ofmultiple integrated wafer-level processing systems connected togetheraccording to aspects of the present invention; and

FIG. 7 illustrates a flow diagram of a method for manufacturing anintegrated wafer-level processing system according to aspects of thepresent disclosure.

DETAILED DESCRIPTION

Various implementations are described below by referring to severalexamples of an integrated wafer-level processing system that packages aprocessing element on a memory wafer. The integrated wafer-levelprocessing system may include a memory wafer and a processing elementconnected to the memory wafer via a data connection. According toaspects of the present disclosure, an integrated wafer-lever processingsystem may include multiple memory wavers and/or multiple processingelements

In some implementations, the present techniques reduce the distancecommands and data travel between the processing element and the memoryelements on the memory wafer. In some examples, the distance may bereduced by approximately 50%. Consequently, the present techniques alsoreduce the time the commands and data take to travel between theprocessing element and the memory elements on the memory wafer. Thepresent techniques also provide more connections between the processingelement and the memory elements than traditional implementations thatutilize a circuit board positioned between the processing and memoryelements without occupying additional physical space. By eliminating theneed for coupling the processor-to-memory data path through long circuitboard or a similar long intermediary element connection, more shortpaths for transferring data between the processor and the memoryelements are possible. This is made possible by use of on wafer wiringand/or interconnections, use of a high number of short connections fromprocessor to memory die, die stacks and/or memory wafers or through thepackage to a chip, chip stack and or memory wafer or wafers. In part,because the circuit board itself is eliminated or length of connectionsfrom processor to memory is substantially reduced, manufacturing costsand size demands are reduced. These and other advantages will beapparent from the description that follows.

FIG. 1A illustrates a top view and FIG. 1B illustrates a side view of ablock diagram of an embodiment of an integrated wafer-level processingsystem 100 according to aspects of the present disclosure. Theintegrated wafer-level processing system 100 comprises a memory wafer110 and a processing element 120 that is connected to the memory wafer110 via a data connection 130 (illustrated in FIG. 1B). It should beappreciated that the processing element 120 connects to the memory wafer110 directly without the use of an intermediate circuit board (e.g., amother board), although, in examples, an intermediate package may beused as described herein.

It should be appreciated that the data connection 130 may pass directlyfrom the processing element 120 to the memory wafer 110 or from theprocessing element 120 through a package and then to the memory wafer110. In the latter case with use of a package, the package may alsoserve to provide power to and distribution therein to the processingelement 120 and/or the memory wafer 110. The data connection 130connecting the memory wafer 110 and the processing element 120 may be anelectrical connection (i.e., a wired connection) or may be an opticalconnection. This provides flexibility in pairing memory wafers andprocessing elements as well as providing increased bandwidth overconventional techniques. In examples, the memory wafer 110 comprises awiring interconnect to enable the processing element 120 to connect tothe memory wafer 110 via the data connection 130. For example, aninterconnection for data, other communications, and/or power may beprovided through a package. Additional data connections may beimplemented in alternate embodiments.

In examples, the memory wafer 110 includes course grid wiring to enablepower to be supplied to the processing system 100. In other examples, apackage, such as an organic package, a silicon package, a glass oralternate dielectric package(s) may be used to provide power to thememory and/or processor die. Signal interconnections may be based onelectrical interconnections across a wafer, across an organic package, asilicon package, a glass package and/or in combination with opticalconnections such as but not limited to glass wave guide (fiber)interconnections, wave guide interconnection(s), or a ceramic package,in between the processing element 120 and the memory wafer 110. Thepackages may be mounted horizontally on the wafers or vertically fromthe wafers and, in examples, may include flex packaging, organicpackaging, ceramic packaging and/or integrated inductors, integrateddecoupling capacitors or active voltage circuit controls.

In examples, the integrated wafer-level processing system 100 furthercomprises a cooling unit (or multiple cooling units). The cooling unitmay be a passive cooling unit, such as a heat sync, heat spreader, ormay be an active cooling unit such as an air cooling unit (e.g., a fan)such as with heat cooling fins, a liquid (e.g., water) cooling unit,and/or an integrated hybrid air and liquid cooling solution.

Additionally, in aspects of the present disclosure, the processingsystem 100 may include a package (also referred to as an interposer) toprovide integrated decoupling for power distribution to the memory wafer110 and the processing element 120. The package enables course wiringconnections to carry power to the integrated wafer-level processingsystem 100. The package may also provide for off-processing systemcommunication.

In some examples, field programmable gate arrays (FPGAs) may be used tocomplement the processing element 120 to provide acceleration forcertain types of processing activities. This enables the processingelement 120 to execute commands more quickly.

Memory stacks may be used to stack extra memory elements adjacent to theprocessing element 110 to provide additional memory elements to theprocessor. For example, a hybrid memory cube (HMC), high-bandwidthmemory (HBM) or other high density and/or high bandwidth memory elementsmay be implemented to provide a localized extra memory boost in closeproximity to the processing element or combinations of various types ofmemory in the system.

FIG. 2 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system 200 according to aspects of thepresent disclosure. The integrated wafer-lever processing system 200comprises a memory wafer 210 and a processing element 220. Theprocessing element 220 is connected to the memory wafer 210 via a dataconnection.

The memory wafer 210 comprises a plurality of memory elements 212. Eachof the plurality of memory elements may be a dynamic random accessmemory (DRAM) element, a flash memory element, or other suitable type ofmemory element. In some examples, each of the plurality of memoryelements 212 is the same type of memory element (i.e., each of theplurality of memory elements 212 is a DRAM memory element). However, insome examples, the plurality of memory elements 212 comprises differenttypes of memory elements (e.g., a DRAM memory element, a flash memoryelement, etc.). It should be appreciated that, although only 9 memoryelements 212 are illustrated in FIG. 2, the memory wafer 210 may containhundreds or even thousands of memory elements.

The memory elements 212 may include wafers such as DRAM, RRAM, SRAM,non-volatile memory, Flash Memory, Phase Change Memory, and/orcombinations with memory stacks with or without logic control chips perchip stack. The memory elements 212 may also include memory interfacechips to one or more memory elements 212 within the memory wafer 210and/or the one or more memory chip stacks.

In aspects of the present disclosure, the memory elements 212 of thememory wafer 210 are connected to the processing element 220 using rankgroups of, for example, 9 to 18 memory elements such as those used intraditional implementations. In examples, four ranks can be connected.In this example, this means that approximately 216-288 memory elements(which may be roughly the number of memory elements on a memory wafer)can be connected per processing element.

In addition to using many memory elements purely for capacity,bad/failed memory elements on the memory wafer 210 can be amelioratedvia error checking and correcting (ECC) techniques (i.e., a bad memoryelement may be electronically turned off). This enables fault tolerance,test, and repair for the processing system 210. In addition, known gooddie (KGD) techniques may be applied to the memory wafer 210 to test thememory elements 212 during and/or after manufacture to verify theintegrity and functionality of the memory wafer 210. In examples, memoryelements 212 that are positioned near the outer edge of the memory wafer210, vertical connections between the memory elements on another memorywafer may be used.

FIG. 3 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system 300 according to aspects of thepresent disclosure. The integrated wafer-level processing system 300includes a plurality of memory wafers 310 a, 310 b, 310 c connectedtogether. In the example of FIG. 3, the processing system 300 includesvertical connections among the plurality of memory wafers 310 a, 310 b,310 c. The memory wafers 310 a, 310 b, 310 c may be physicallyconnected, such as by solder, bonding, etc.

To enable the plurality of memory wafers 310 a, 310 b, 310 c tocommunicate, the memory wafers may be thinner than traditional wafers.For example, in the present embodiment of FIG. 3, the plurality ofmemory wafers 310 a, 310 b, 310 c may be on the order of 50 microns inthickness as opposed to traditional wafers that may be on the order of780 microns in thickness. The plurality of memory wafers 310 a, 310 b,310 c may be mounted to a physical structure to support the memorywafers. The physical structure may be manufactured from silicon,ceramic, metal, plastic, or other suitable materials.

The vertical connections between the plurality of memory wafers 310 a,310 b, 310 c utilize through silicon vias (TSVs) to establish dataconnection between the plurality of memory wafers 310 a, 310 b, 310 c.This allows for short communicative connections between the plurality ofmemory wafers 310 a, 310 b, 310 c compared to traditionalimplementations using a circuit board between the memory elements andprocessing elements.

In examples, the plurality of memory wafers 310 a, 310 b, 310 c may beheterogeneous in that the memory wafers may vary in type (e.g., memorywafers 310 a, 310 b may include DRAM memory elements and memory wafer310 c may include flash memory elements) or may be homogeneous in thatthe memory wafers may be of the same type (e.g., memory wafers 310 a,310 b, 310 c include DRAM memory elements). Additionally, each of thememory wafers may individually be heterogeneous (e.g., memory wafer 310a includes DRAM memory elements and flash memory elements) orhomogeneous (e.g., memory wafer 310 b includes only DRAM memoryelements).

The integrated wafer-level processing system 300 also includes aprocessing element 320 connected to at least one of the plurality ofmemory wafers 310 a, 310 b, 310 c via a data connection.

In examples, a first memory wafer (e.g., memory wafer 310 a) of theplurality of memory wafers is stacked on top of a second memory wafer(e.g., memory wafer 310 b) of the plurality of memory wafers. The firstmemory wafer is connected to the second memory wafer, such as through athrough silicon via. A third memory wafer (e.g., memory wafer 310 c) maybe stacked under and connected to the second memory wafer (e.g. memorywafer 310 b).

Additionally, each of the plurality of memory wafers may include adicing channel or channels. The dicing channel may be used for at leastone of a through silicon electrical via and a through silicon opticalvia to connect the first memory wafer of the plurality of memory wafersto the second memory wafer of the plurality of memory wafers. Inexamples, the dicing channels may be utilized for heat transfer andpower delivery. The dicing channel defines a space between the memoryelements on a wafer that is intentionally created to permit post-waferprocessing dicing or singulation of processing elements from the memorywafer as well as any space on a memory wafer in addition to the dicingchannel that may be available other than for active die processing. Inother examples, connections formed between two memory wafers not usingthe dicing channel can include space or areas between the active memorywafer and/or memory elements and perimeter edge of a memory wafer. Thismay include the outer 1 to 3 mm of the memory wafer for example.

FIG. 4 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system 400 according to aspects of thepresent disclosure. The integrated wafer-level processing system 400includes a memory wafer 410 and a plurality of processing elements 420a, 420 b, 420 c. Each of the plurality of processing elements 420 a, 420b, 420 c is connected to the memory wafer 410 via a data connection(e.g., an electrical connection, an optical connect, etc.).

FIG. 5 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system 500 according to aspects of thepresent disclosure. The integrated wafer-level processing system 500includes a plurality of memory wafers 510 a, 510 b, 510 c, connectedtogether.

The integrated wafer-level processing system 500 also includes aplurality of processing elements 520 a, 520 b, 520 c connected to atleast one of the plurality of memory wafers via a data connection. Inthe example of FIG. 5, processing elements 520 a, 520 b, 520 c areconnected to the memory wafer 510 a.

FIG. 6 illustrates a block diagram of an alternate embodiment of anintegrated wafer-level processing system 600 according to aspects of thepresent disclosure. The integrated wafer-level processing system 600includes a plurality of memory wafers 610 a, 610 b, 610 c, 610 dconnected together.

The integrated wafer-level processing system 600 also includes aplurality of processing elements 620 a, 620 b, 620 c, 620 d connected toat least one of the plurality of memory wafers 610 a, 610 b, 610 c, 610d via a data connection. In the example of FIG. 6, processing elements620 a, 620 b, 620 c are connected to the memory wafer 610 a and theprocessing element 620 d is connected to the memory wafer 610 d. Itshould be appreciated that any of the plurality of memory wafers 610 a,610 b, 610 c, 610 d may comprise a processing element or multipleprocessing elements.

FIG. 7 illustrates a flow diagram of a method 700 for manufacturing anintegrated wafer-level processing system according to aspects of thepresent disclosure. The method 700 starts at block 702 and continues toblock 704. At block 740, the method 700 includes forming a memory wafercomprising a plurality of memory elements. The method 700 continues toblock 706. At block 706, the method 700 includes electrically andphysically connecting a processing element to the memory wafer, whereinthe processing element is configured to transmit data to and receivedata from the plurality of memory elements. The method continues toblock 708 and ends.

Additional processes also may be included. For example, the method 700may include forming a dicing channel on the memory wafer. The dicingchannel may be used for at least one of a through silicon electrical viaand a through silicon optical via to connect the memory wafer to anothermemory wafer. It should be understood that the processes depicted inFIG. 7 represent illustrations, and that other processes may be added orexisting processes may be removed, modified, or rearranged withoutdeparting from the scope and spirit of the present disclosure.

The memory wafer(s), the power delivery system, the electrical andoptical interconnections and cooling system can be mechanicallyintegrated using integrated silicon liquid cooling solutions across oneor more memory wafers and/or processing elements, air cooling solutionsacross one or more memory wafers, and use of mechanical supports for thememory wafers and processing elements as well as any power deliverysubstrates, cables and frames to house one or more systems orsub-systems for system level integration. These systems or sub-systemsmay be used, for example, for personal computing, high performancesystem solutions, cloud computing systems, and may be utilized withencrypted security of communications within and/or between subsystems orsystems to aide in security and privacy of information.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousaspects of the present disclosure. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

The descriptions of the various examples of the present disclosure havebeen presented for purposes of illustration, but are not intended to beexhaustive or limited to the embodiments disclosed. Many modificationsand variations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the described techniques.The terminology used herein was chosen to best explain the principles ofthe present techniques, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the techniquesdisclosed herein.

What is claimed is:
 1. A method for manufacturing an integratedwafer-level processing system comprising: forming a memory wafercomprising a plurality of memory elements; and electrically andphysically connecting a processing element to the memory wafer, whereinthe processing element is configured to transmit data to and receivedata from the plurality of memory elements; wherein the processingelement is directly connected to the memory wafer via a data connectionsuch that the data connection connects directly between the processingelement and the memory wafer without using an intermediary circuit boardbetween the memory wafer and the data connection and the processingelement and the data connection, the plurality of memory elements andthe processing element being on a same side of the memory wafer; whereinthe data connection is disposed between the processing element and thememory wafer only near one peripheral area of said processing element,the remaining peripheral areas of said processing element being free ofdata connections; wherein the data connection is a wire connection or anoptical connection such that one end of the wire connection or theoptical connection is connected to the processing element and anopposite end of the wire connection or the optical connection isconnected to the memory wafer; wherein the processing element directlyconnects to the wire connection or the optical connection and the wireconnection or the optical connection directly connects to the memorywafer; wherein the processing element is positioned center of the memorywafer.
 2. The method of manufacturing the integrated wafer-levelprocessing system of claim 1, further comprising: forming a dicingchannel on the memory wafer.
 3. The method of manufacturing theintegrated wafer-level processing system of claim 2, wherein the dicingchannel is used for a through silicon optical via to connect the memorywafer to another memory wafer to establish a signal interconnection. 4.The method of manufacturing the integrated wafer-level processing systemof claim 1, wherein the data connection is a continuous piece.